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0m) and 5V/3
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Global approach universal enclosure with dedicated accessories regarding the application (automatism
Størrelse: 30 x 30 x 12mm
IRFB3207Z transistor - N-MOSFET, 75V, 170A, 300W (TO220AB) Vognmand 0m) and 5V/3Tekniske detaljer: Producent: INTERNATIONAL RECTIFIER Transistor type: N MOSFET Polarisation: Unipolar Transistor variant: HEXFET Drain source spnding: 75V Drain strm: 170A Effekt: 300W Hus: TO220AB Gate source spnding: 20V On state modstand: 4,1mOhm Junction to case termisk modstand: 500mK W Montage: Printhul Gate charge: 120nC
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